收藏本站
DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
Low On-Resistance
?
Case: DFN2015H4-3
?
39m ? @ V GS = -4.5V
?
Case Material: Molded Plastic, “Green” Molding Compound.
?
?
?
?
?
?
?
? 52m ? @ V GS = -2.5V
? 65m ? @ V GS = -1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3kV
"Green" Device, Halogen and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
S
D
G
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-16
±8
Units
V
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
-2.5
-2.2
-12
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J, T STG
Value
0.49
250.7
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
4. Repetitive rating, pulse width limited by junction temperature.
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
1 of 6
www.diodes.com
December 2009
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMG3420U-7 MOSFET N-CH 20V 5.47A SOT23
DMG4406LSS-13 MOSFET N CH 30V 10.3A SO-8
DMG4413LSS-13 MOSFET P-CH 30V 10.5A SOP8L
DMG4435SSS-13 MOSFET P-CH 30V 7.3A 8SOIC
DMG4466SSS-13 MOSFET N-CH 30V 10A SO8
DMG4466SSSL-13 MOSFET N-CH 30V 10A SO8
DMG4468LFG MOSFET N-CH 30V 7.62A 8DFN
DMG4468LK3-13 MOSFET N-CH 30V 9.7A TO252
相关代理商/技术参数
DMG3415UQ-7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U-7 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG3420UQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMG-400 制造商:Pro-Signal 功能描述:GOOSENECK MIC BARE ENDS 制造商:PRO SIGNAL 功能描述:GOOSENECK MIC, BARE ENDS 制造商:pro-power 功能描述:GOOSENECK MIC, BARE ENDS; Output Impedance:500ohm; Frequency Response Min:200Hz; Frequency Response Max:12kHz; Sensitivity:2.2mV/Pa/1kHz; Connector Type:3 Bare Wire Ends; Device Type:Gooseneck Microphone; External Diameter:28mm;
DMG4406LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMG4406LSS-13 功能描述:MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4407SSS-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube